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http://hdl.handle.net/11375/19163
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DC Field | Value | Language |
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dc.contributor.advisor | Kleiman, Rafael N | - |
dc.contributor.author | Gerber, Martin W | - |
dc.date.accessioned | 2016-04-28T18:31:21Z | - |
dc.date.available | 2016-04-28T18:31:21Z | - |
dc.date.issued | 2016-06-17 | - |
dc.identifier.uri | http://hdl.handle.net/11375/19163 | - |
dc.description.abstract | Recombination mechanisms in gallium arsenide have been studied using temperature-dependent time-resolved photoluminescence-decay. New analytical methods are presented to improve the accuracy in bulk lifetime measurement, and these have been used to resolve the temperature-dependent lifetime. Fits to temperature-dependent lifetime yield measurement of the radiative-efficiency, revealing that samples grown by the Czochralski and molecular-beam-epitaxy methods are limited by radiative-recombination at 77K, with defect-mediated nonradiative-recombination becoming competitive at 300K and above. In samples grown with both doping types using molecular-beam-epitaxy, a common exponential increase in capture cross-section characterized by a high value of E_infinity=(258 +/- 1)meV was observed from the high-level injection lifetime over a wide temperature range (300-700K). This common signature was also observed from 500-600K in the hole-lifetime observed in n-type Czochralski GaAs where E_infinity=(261 +/- 7)meV was measured, which indicates that this signature parametrizes the exponential increase in hole-capture cross-section. The high E_infinity value rules out all candidate defects except for EL2, by comparison with hole-capture cross-section data previously measured by others using deep-level transient spectroscopy. | en_US |
dc.language.iso | en | en_US |
dc.subject | semiconductors | en_US |
dc.subject | photovoltaics | en_US |
dc.subject | solar energy | en_US |
dc.subject | radiative efficiency | en_US |
dc.subject | time resolved photoluminescence | en_US |
dc.subject | photoluminescence decay | en_US |
dc.subject | gallium arsenide | en_US |
dc.subject | GaAs | en_US |
dc.subject | III-V | en_US |
dc.subject | direct bandgap | en_US |
dc.subject | lifetime | en_US |
dc.subject | diffusion | en_US |
dc.subject | surface recombination | en_US |
dc.subject | trapping | en_US |
dc.subject | deep levels | en_US |
dc.subject | EL2 | en_US |
dc.subject | dominant defect | en_US |
dc.subject | defect characterization | en_US |
dc.subject | photoluminescence spectroscopy | en_US |
dc.subject | analytical methods | en_US |
dc.subject | defect identification | en_US |
dc.subject | double heterostructure | en_US |
dc.title | A Study of Recombination Mechanisms in Gallium Arsenide using Temperature-Dependent Time-Resolved Photoluminescence | en_US |
dc.title.alternative | Recombination Mechanisms in Gallium Arsenide | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | Engineering Physics | en_US |
dc.description.degreetype | Thesis | en_US |
dc.description.degree | Doctor of Philosophy (PhD) | en_US |
Appears in Collections: | Open Access Dissertations and Theses |
Files in This Item:
File | Description | Size | Format | |
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gerber_martin_w_2016april_phd.pdf | PhD Thesis | 34.73 MB | Adobe PDF | View/Open |
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