Please use this identifier to cite or link to this item:
http://hdl.handle.net/11375/17433Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | Chisholm, S. H. | - |
| dc.contributor.author | Cizmar , Edward S. | - |
| dc.date.accessioned | 2015-06-01T20:40:41Z | - |
| dc.date.available | 2015-06-01T20:40:41Z | - |
| dc.date.issued | 1969-05 | - |
| dc.identifier.uri | http://hdl.handle.net/11375/17433 | - |
| dc.description | Scope and contents: The static and dynamic electrical characteristics of silicon n-channel MOS FETs are studied down to cryogenic temperatures. Particular emphasis is directed towards the effect of interface states on the temperature dependence of both the pinch-off voltage and 1/f noise. | en_US |
| dc.description.abstract | No abstract included. | en_US |
| dc.language.iso | en | en_US |
| dc.subject | silicon n-channel MOS FETs | en_US |
| dc.subject | interface states | en_US |
| dc.subject | temperature dependence | en_US |
| dc.subject | pinch-off voltage | en_US |
| dc.subject | 1/f noise | en_US |
| dc.title | A Low Temperature Study of the N-Channel MOS FET | en_US |
| dc.type | Thesis | en_US |
| dc.contributor.department | Electrical Engineering | en_US |
| dc.description.degreetype | Thesis | en_US |
| dc.description.degree | Master of Engineering (MEngr) | en_US |
| Appears in Collections: | Open Access Dissertations and Theses | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Cizmar_Edward_S_1969May_Masters.pdf | Thesis | 11.74 MB | Adobe PDF | View/Open |
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