Nitrogen Implanted α-SiC : A Correlation Between Electrical (C-V) Measurements and Damage Studies Using the Channeling Technique.

Chan, Albert M. C.

Please use this identifier to cite or link to this item: http://hdl.handle.net/11375/16881

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DC Field	Value	Language
dc.contributor.advisor	Thompson, D.A.	-
dc.contributor.author	Chan, Albert M. C.	-
dc.date.accessioned	2015-04-07T16:40:05Z	-
dc.date.available	2015-04-07T16:40:05Z	-
dc.date.issued	1975	-
dc.identifier.uri	http://hdl.handle.net/11375/16881	-
dc.description	Part A of two Project Reports; Part B can be found at: http://hdl.handle.net/11375/17691	en_US
dc.description.abstract	<p>The annealing behaviour of 15N implanted, aluminum doped-SiC has been studied by measuring the differential capacitance as a function of applied bias. The samples were doubly implanted at 450°c with 45 Kev and 25 Kev ions, for a dose of 10^16/cm^2 at each energy.</p> <p> An n-i-p structure with a thick insulator region was found after annealing at 1000°c. The thickness of this i region could be substantially reduced with additional annealing at higher temperatures, and a fairly good n-p junction was obtained after 1480°c anneal.</p> <p> About 20-30% of the implanted nitrogen ions were found to be electrically active.</p> <p> The C-V behaviour was found to have large variations with the a.c. measuring frequency.</p>	en_US
dc.language.iso	en_US	en_US
dc.subject	SiC, implanted, annealing, nitrogen, electrically, C-V,	en_US
dc.title	Nitrogen Implanted α-SiC : A Correlation Between Electrical (C-V) Measurements and Damage Studies Using the Channeling Technique.	en_US
dc.type	Thesis	en_US
dc.contributor.department	Engineering Physics	en_US
dc.description.degreetype	Thesis	en_US
dc.description.degree	Master of Engineering (MEngr)	en_US
Appears in Collections:	Open Access Dissertations and Theses

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