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http://hdl.handle.net/11375/16881
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DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Thompson, D.A. | - |
dc.contributor.author | Chan, Albert M. C. | - |
dc.date.accessioned | 2015-04-07T16:40:05Z | - |
dc.date.available | 2015-04-07T16:40:05Z | - |
dc.date.issued | 1975 | - |
dc.identifier.uri | http://hdl.handle.net/11375/16881 | - |
dc.description | Part A of two Project Reports; Part B can be found at: http://hdl.handle.net/11375/17691 | en_US |
dc.description.abstract | <p>The annealing behaviour of 15N implanted, aluminum doped-SiC has been studied by measuring the differential capacitance as a function of applied bias. The samples were doubly implanted at 450°c with 45 Kev and 25 Kev ions, for a dose of 10^16/cm^2 at each energy.</p> <p> An n-i-p structure with a thick insulator region was found after annealing at 1000°c. The thickness of this i region could be substantially reduced with additional annealing at higher temperatures, and a fairly good n-p junction was obtained after 1480°c anneal.</p> <p> About 20-30% of the implanted nitrogen ions were found to be electrically active.</p> <p> The C-V behaviour was found to have large variations with the a.c. measuring frequency.</p> | en_US |
dc.language.iso | en_US | en_US |
dc.subject | SiC, implanted, annealing, nitrogen, electrically, C-V, | en_US |
dc.title | Nitrogen Implanted α-SiC : A Correlation Between Electrical (C-V) Measurements and Damage Studies Using the Channeling Technique. | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | Engineering Physics | en_US |
dc.description.degreetype | Thesis | en_US |
dc.description.degree | Master of Engineering (MEngr) | en_US |
Appears in Collections: | Open Access Dissertations and Theses |
Files in This Item:
File | Description | Size | Format | |
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Chan Albert.pdf | 2.73 MB | Adobe PDF | View/Open |
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