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http://hdl.handle.net/11375/13084
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DC Field | Value | Language |
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dc.contributor.advisor | Deen, Jamal M. | en_US |
dc.contributor.author | Ranuarez, Juan C. | en_US |
dc.date.accessioned | 2014-06-18T17:02:20Z | - |
dc.date.available | 2014-06-18T17:02:20Z | - |
dc.date.created | 2013-07-11 | en_US |
dc.date.issued | 2005-07 | en_US |
dc.identifier.other | opendissertations/7912 | en_US |
dc.identifier.other | 8991 | en_US |
dc.identifier.other | 4307427 | en_US |
dc.identifier.uri | http://hdl.handle.net/11375/13084 | - |
dc.description.abstract | <p>Thanks to geometry scaling, CMOS is becoming the technology of choice for the implementation of radio-frequency and microwave integrated circuits. While CMOS has several advantages over other technologies, such as low-cost and the possibility to integrate analog and digital circuitry on the same chip, its use for high-frequency analog circuits also presents several challenges, because there are some areas where scaling has impaired instead of improving the active and passive device performance. While several techniques can be used to minimize these undesirable effects, many of them only work over very narrow frequency bands; the implementation of circuits that achieve a desired performance over a very wide frequency band is thus a major challenge. Moreover, with further reduction of the transistor dimensions, new effects, such as gate current due to quantum-mechanical tunneling through the gate oxide, will become increasingly significant.</p> <p>This thesis deals with the analysis and design of CMOS broadband amplifiers. A distributed amplifier in a 0.18 μm standard CMOS technology was designed, implemented and measured. It achieves a bandwidth of 2-13 GHz with a 6 dB gain, and better than -9 dB input and output reflections, while consuming 86 mW from a 1.8 V supply and using 2.6 x 1.3 mm<sup>2</sup> of chip area. The variation of the amplifier characteristics with temperature was studied in the range from 25°C to 125°C. It was found that the forward gain and noise figure change significantly with temperature, while the reflection coefficients, reverse gain and group delay are largely unaffected.</p> <p>A resistive-match amplifier was implemented in 0.18 μm CMOS technology. It has an average gain of 6.5 dB in the 2-7 GHz band with a noise figure lower than 5.4 dB, with input reflection coefficient of less than -3.5 dB and output reflection coefficient of less than -5 dB. It consumes 18.4 mW from a 1.8 V supply, and occupies 1.28 x 0.55 mm<sup>2</sup> of chip area. It was found that the gain reduction with temperature is much smaller than that of the distributed amplifier.</p> | en_US |
dc.subject | Electrical and Computer Engineering | en_US |
dc.subject | Electrical and Computer Engineering | en_US |
dc.title | Broadband Microwave Amplifiers in Deep Sub-micron CMOS Technology | en_US |
dc.type | thesis | en_US |
dc.contributor.department | Electrical and Computer Engineering | en_US |
dc.description.degree | Master of Applied Science (MASc) | en_US |
Appears in Collections: | Open Access Dissertations and Theses |
Files in This Item:
File | Size | Format | |
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fulltext.pdf | 8.6 MB | Adobe PDF | View/Open |
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