A Low Temperature Study of the N-Channel MOS FET
| dc.contributor.advisor | Chisholm, S. H. | |
| dc.contributor.author | Cizmar , Edward S. | |
| dc.contributor.department | Electrical Engineering | en_US |
| dc.date.accessioned | 2015-06-01T20:40:41Z | |
| dc.date.available | 2015-06-01T20:40:41Z | |
| dc.date.issued | 1969-05 | |
| dc.description | Scope and contents: The static and dynamic electrical characteristics of silicon n-channel MOS FETs are studied down to cryogenic temperatures. Particular emphasis is directed towards the effect of interface states on the temperature dependence of both the pinch-off voltage and 1/f noise. | en_US |
| dc.description.abstract | No abstract included. | en_US |
| dc.description.degree | Master of Engineering (MEngr) | en_US |
| dc.description.degreetype | Thesis | en_US |
| dc.identifier.uri | http://hdl.handle.net/11375/17433 | |
| dc.language.iso | en | en_US |
| dc.subject | silicon n-channel MOS FETs | en_US |
| dc.subject | interface states | en_US |
| dc.subject | temperature dependence | en_US |
| dc.subject | pinch-off voltage | en_US |
| dc.subject | 1/f noise | en_US |
| dc.title | A Low Temperature Study of the N-Channel MOS FET | en_US |
| dc.type | Thesis | en_US |