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Complex Rare-earth Antimonide Suboxides for Thermoelectric Applications

dc.contributor.advisorMozharivskyj, Yurijen_US
dc.contributor.advisorJohn E Greedan, Jacques Barbieren_US
dc.contributor.authorWang, Li Pengen_US
dc.contributor.departmentChemistry and Chemical Biologyen_US
dc.date.accessioned2014-06-18T17:01:11Z
dc.date.available2014-06-18T17:01:11Z
dc.date.created2013-04-05en_US
dc.date.issued2013-04en_US
dc.description.abstract<p>Thermoelectric (TE) materials are able to convert heat directly into electricity and vice versa. This special property makes them valuable for a variety of applications involving power generation and refrigeration. In the search for potential high-performance TE materials, a number of rare-earth (<em>RE</em>) antimonide suboxide phases have been investigated.This presentation will focus on two classes of rare-earth antimonide suboxides: the <em>RE</em><sub>3</sub>Sb<sub>3</sub>O<sub>3</sub> and <em>RE</em><sub>8</sub>Sb<sub>3-</sub><em><sub>d</sub></em>O<sub>8</sub> phases (<em>C</em>2/<em>m</em> space group) based on the <em>RE</em>–O frameworks and the <em>anti</em>-ThCr<sub>2</sub>Si<sub>2</sub> type <em>RE</em><sub>2</sub>SbO<sub>2</sub> compounds (<em>I</em>4/<em>mmm</em> space group). The physical property measurements on the high-purity bulk samples revealed unexpected semiconducting properties in the non-charge-balanced systems, i.e.<em> RE</em><sub>8</sub>Sb<sub>3-</sub><em><sub>d</sub></em>O<sub>8</sub> and <em>RE</em><sub>2</sub>SbO<sub>2</sub>. Since the electronic structure calculations suggest that the anionic Sb states dominate the valence band at the vicinity of the Fermi level, the local structure of the Sb atomic site is believed to dictate the observed physical properties. The charge transport properties are explained within the framework of Anderson/Mott-type localizations. Ultimately, systematic investigation of the <em>RE</em><sub>2</sub>SbO<sub>2</sub> and Ho<sub>2</sub>Sb<sub>1-<em>x</em></sub>Bi<em><sub>x</sub></em>O<sub>2</sub> series reveal the large variability of the electrical properties caused by the local structural perturbations.</p>en_US
dc.description.degreeDoctor of Philosophy (PhD)en_US
dc.identifier.otheropendissertations/7749en_US
dc.identifier.other8808en_US
dc.identifier.other3999770en_US
dc.identifier.urihttp://hdl.handle.net/11375/12902
dc.subjectSemiconductoren_US
dc.subjectThermoelectricen_US
dc.subjectSolid-state Chemistryen_US
dc.subjectCrystallographyen_US
dc.subjectRare-earth Elementsen_US
dc.subjectElectronic Structureen_US
dc.subjectCondensed Matter Physicsen_US
dc.subjectInorganic Chemistryen_US
dc.subjectMaterials Chemistryen_US
dc.subjectSemiconductor and Optical Materialsen_US
dc.subjectCondensed Matter Physicsen_US
dc.titleComplex Rare-earth Antimonide Suboxides for Thermoelectric Applicationsen_US
dc.typethesisen_US

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