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|Title:||Computer Simulation of Ion Implantation|
|Authors:||El-Agizi, George Nabil|
|Keywords:||Electrical and Electronics;Electrical and Electronics|
|Abstract:||<p>In this work, a computer simulation for ion implantation has been carried out based on a simplified random model. This simulation has been used to obtain range profiles and deposited damaging energy distributions, for any system and for a wide energy range. The obtained distributions show good agreement with the third order Edgeworth expansion approximation of the standard transport theory solution (the WSS theory). By taking into account the motion of the first knock on atoms, as well as the incident ion itself, a good agreement between the simulation and the WSS theory is found for the damage distribution. A random model for dealing with poly-atomic targets is presented. Results obtained show good agreement with the available experimental results for range profiles. The simulation includes obtaining a complete picture of the collision cascade (in space and time). The complete picture of the collision is discussed in relation to the recently observed "molecular effect" and explains some available experimental results. The examination of typical cascades suggests that high energy density regions are responsible primarily for the obtained departures from "Linear Cascade Theory".</p>|
|Appears in Collections:||Open Access Dissertations and Theses|
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