Spatially resolved and polarization resolved electroluminescence of 1.3 μm InGaAsP semiconductor diode lasers

Please use this identifier to cite or link to this item: http://hdl.handle.net/11375/8384

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DC Field	Value	Language
dc.contributor.advisor	Cassidy, D.T.	en_US
dc.contributor.author	Peters, Hudson Frank	en_US
dc.date.accessioned	2014-06-18T16:42:46Z	-
dc.date.available	2014-06-18T16:42:46Z	-
dc.date.created	2010-11-29	en_US
dc.date.issued	1991-09	en_US
dc.identifier.other	opendissertations/3593	en_US
dc.identifier.other	4610	en_US
dc.identifier.other	1663707	en_US
dc.identifier.uri	http://hdl.handle.net/11375/8384	-
dc.description.abstract	<p>A technique for obtaining maps of the spatially-resolved and polarization-resolved electroluminescence of 1.3 μm semiconductor diode lasers has been developed. It reveals information about the strain, scattering and absorption which exist in the active region of lasers. These data have been correlated with the spectral output of the lasers, and models have been developed which explain the correlation.</p>	en_US
dc.subject	Engineering Physics	en_US
dc.subject	Other Engineering	en_US
dc.subject	Other Engineering	en_US
dc.title	Spatially resolved and polarization resolved electroluminescence of 1.3 μm InGaAsP semiconductor diode lasers	en_US
dc.type	thesis	en_US
dc.contributor.department	Engineering Physics	en_US
dc.description.degree	Doctor of Philosophy (PhD)	en_US
Appears in Collections:	Open Access Dissertations and Theses

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