Characterization of quantum wells using degree of polarization of photoluminescence

Balasubramanian, Lakshmi

Please use this identifier to cite or link to this item: http://hdl.handle.net/11375/8094

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DC Field	Value	Language
dc.contributor.advisor	Cassidy, D.T.	en_US
dc.contributor.author	Balasubramanian, Lakshmi	en_US
dc.date.accessioned	2014-06-18T16:41:49Z	-
dc.date.available	2014-06-18T16:41:49Z	-
dc.date.created	2010-09-28	en_US
dc.date.issued	1997-06	en_US
dc.identifier.other	opendissertations/3328	en_US
dc.identifier.other	4340	en_US
dc.identifier.other	1584523	en_US
dc.identifier.uri	http://hdl.handle.net/11375/8094	-
dc.description.abstract	<p>The state of polarization of photoluminescence that is emitted along (001) and (110) crystallographic orientations has been studied to obtain quantitative information on the interfacial strain, thickness and biaxial strain in InP/InGaAs(P)/InP quantum wells. It is demonstrated that the edge emission from quantum wells is a sensitive function of the strain and thickness of the quantum well. The anisotropic polarization of photoluminescence that is emitted normal to the plane of the quantum well provides information regarding the interfacial features. This anisotropy has been correlated to the anisotropic strain field that is associated with the strained bonds at the interfaces of the quantum wells.</p>	en_US
dc.subject	Engineering Physics	en_US
dc.subject	Other Engineering	en_US
dc.subject	Other Engineering	en_US
dc.title	Characterization of quantum wells using degree of polarization of photoluminescence	en_US
dc.type	thesis	en_US
dc.contributor.department	Engineering Physics	en_US
dc.description.degree	Doctor of Philosophy (PhD)	en_US
Appears in Collections:	Open Access Dissertations and Theses

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