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http://hdl.handle.net/11375/30047Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | Cassidy, Daniel. T. | - |
| dc.contributor.author | Sheng, Chen | - |
| dc.date.accessioned | 2024-08-15T15:40:43Z | - |
| dc.date.available | 2024-08-15T15:40:43Z | - |
| dc.date.issued | 1992-09 | - |
| dc.identifier.uri | http://hdl.handle.net/11375/30047 | - |
| dc.description.abstract | The effect of strain (stress) on the below threshold output of InGaAsP diode lasers has been investigated theoretically and experimentally. The degree of polarization (DOP) and the polarization- resolved spectral output (PRSO) were obtained as a function of the external stress applied to the device. A correlation between the DOP and the peak of the PRSO as a function of the stress was found. This correlation suggests that below threshold, DOP can be used to measure the strain in the active region of lasers. A model based on a strain modified Shockley matrix for the band calculation and a strain modified dipole moment for the optical emission has been constructed to bridge the correlation between the DOP and PRSO. | en_US |
| dc.language.iso | en | en_US |
| dc.subject | Physics | en_US |
| dc.title | THEORETICAL AND EXPERIMENTAL INVESTIGATION FOR THE EFFECT OF STRAIN ON THE BELOW THRESHOLD OUTPUT OF InGaAsP DIODE LASERS | en_US |
| dc.type | Thesis | en_US |
| dc.contributor.department | Engineering Physics | en_US |
| dc.description.degreetype | Thesis | en_US |
| dc.description.degree | Master of Engineering (ME) | en_US |
| Appears in Collections: | Digitized Open Access Dissertations and Theses | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Sheng_Chen_1992Sept_masters.pdf | 1.84 MB | Adobe PDF | View/Open |
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