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http://hdl.handle.net/11375/26990
Title: | CMOS Single-Photon Avalanche Diodes Towards Positron Emission Tomography Imaging Applications |
Authors: | Jiang, Wei |
Advisor: | Deen, M. Jamal |
Department: | Biomedical Engineering |
Keywords: | Single-Photon Avalanche Diode;Positron Emission Tomography;CMOS;Photosensor;Time-to-digital Converter |
Publication Date: | 2021 |
Abstract: | Single-photon avalanche diodes’ (SPADs) capabilities of detecting even a single photon with excellent timing resolution and compatibility with strong magnetic fields make them the most promising sensor for positron emission tomography imaging systems. With the advancements of silicon fabrication techniques, SPADs designed in standard planar complementary metal-oxide-semiconductor (CMOS) processes show competitive performance and a lower manufacturing cost. Additionally, CMOS SPADs have the potential for monolithic integration with other CMOS signal conditioning and processing circuits to achieve simple, low-cost, and high-performance imaging solutions. This work targets the design and optimization of SPAD sensors to improve their performance using low-cost standard CMOS technologies. Firstly, a detailed review on the SPADs in recent literature is presented. Then, the random telegraph signal (RTS) noise is investigated based on n+/p-well SPADs fabricated in a standard 130 nm CMOS process. Through the measurements and analysis, the RTS noise of a SPAD is found to correlate with its dark count rate and afterpulsing. Next, we design n+/p-well SPADs with field poly gates to improve the noise performance. Furthermore, a SPAD pixel, consisting of a p+/n-well SPAD and a compact and high-speed active quench and reset circuit is designed and fabricated in a standard TSMC 65 nm CMOS process. The post-layout simulations show that this pixel achieves a short 0.1 ns quenching time and a 3.35 ns minimum dead time. The measurement results show that the SPAD pixel has a dark count rate of 21 kHz, a peak photon detection probability of 23.8% at a 420 nm wavelength and a timing jitter of 139 ps using a 405 nm pulsed laser when the excess voltage is set to 0.5 V. Due to the short quenching time, almost no afterpulsing is observed even at a low operating temperature of -35 °C. Finally, a new differential quench and reset (QR) circuit consisting of two QR circuits on both the cathode and anode to quench and reset the SPAD through both terminals is proposed to reduce the reset time, to increase the count rate, to reduce the afterpulsing and to reject the common-mode noise. |
URI: | http://hdl.handle.net/11375/26990 |
Appears in Collections: | Open Access Dissertations and Theses |
Files in This Item:
File | Description | Size | Format | |
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Jiang_Wei_2021September_PhD.pdf | Final submission for Wei Jiang's Ph.D. thesis | 7.28 MB | Adobe PDF | View/Open |
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