Theoretical and Experimental Investigation for the Effect Strain on the Below Threshold Output of InGaAsP Diode Lasers

Cheng, Chen

Please use this identifier to cite or link to this item: http://hdl.handle.net/11375/25226

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DC Field	Value	Language
dc.contributor.advisor	Cassidy, Daniel	-
dc.contributor.author	Cheng, Chen	-
dc.date.accessioned	2020-01-30T17:23:25Z	-
dc.date.available	2020-01-30T17:23:25Z	-
dc.date.issued	1992-09	-
dc.identifier.uri	http://hdl.handle.net/11375/25226	-
dc.description.abstract	The effect of strain (stress) on the below threshold output of InGaAsP diode lasers has been investigated theoretically and experimentally. The degree of polarization (DOP) and the polarization- resolved spectral output (PRSO) were obtained as a function of the external stress applied to the device. A correlation between the DOP and the peak of the PRSO as a function of the stress was found. This correlation suggests that below threshold, DOP can be used to measure the strain in the active region of lasers. A model based on a strain modified Shockley matrix for the band calculation and a strain modified dipole moment for the optical emission has been constructed to bridge the correlation between the DOP and PRSO.	en_US
dc.language.iso	en	en_US
dc.subject	theoretical investigation	en_US
dc.subject	electrical investigation	en_US
dc.subject	strain effect	en_US
dc.subject	threshold output	en_US
dc.subject	InGaAsP diode	en_US
dc.subject	diode lasers	en_US
dc.title	Theoretical and Experimental Investigation for the Effect Strain on the Below Threshold Output of InGaAsP Diode Lasers	en_US
dc.type	Thesis	en_US
dc.contributor.department	Engineering Physics	en_US
dc.description.degreetype	Thesis	en_US
dc.description.degree	Master of Engineering (ME)	en_US
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