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http://hdl.handle.net/11375/25226
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DC Field | Value | Language |
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dc.contributor.advisor | Cassidy, Daniel | - |
dc.contributor.author | Cheng, Chen | - |
dc.date.accessioned | 2020-01-30T17:23:25Z | - |
dc.date.available | 2020-01-30T17:23:25Z | - |
dc.date.issued | 1992-09 | - |
dc.identifier.uri | http://hdl.handle.net/11375/25226 | - |
dc.description.abstract | The effect of strain (stress) on the below threshold output of InGaAsP diode lasers has been investigated theoretically and experimentally. The degree of polarization (DOP) and the polarization- resolved spectral output (PRSO) were obtained as a function of the external stress applied to the device. A correlation between the DOP and the peak of the PRSO as a function of the stress was found. This correlation suggests that below threshold, DOP can be used to measure the strain in the active region of lasers. A model based on a strain modified Shockley matrix for the band calculation and a strain modified dipole moment for the optical emission has been constructed to bridge the correlation between the DOP and PRSO. | en_US |
dc.language.iso | en | en_US |
dc.subject | theoretical investigation | en_US |
dc.subject | electrical investigation | en_US |
dc.subject | strain effect | en_US |
dc.subject | threshold output | en_US |
dc.subject | InGaAsP diode | en_US |
dc.subject | diode lasers | en_US |
dc.title | Theoretical and Experimental Investigation for the Effect Strain on the Below Threshold Output of InGaAsP Diode Lasers | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | Engineering Physics | en_US |
dc.description.degreetype | Thesis | en_US |
dc.description.degree | Master of Engineering (ME) | en_US |
Appears in Collections: | Digitized Open Access Dissertations and Theses |
Files in This Item:
File | Description | Size | Format | |
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Sheng_Chen_1992Sep_masters.pdf | 3.12 MB | Adobe PDF | View/Open |
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