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http://hdl.handle.net/11375/25226| Title: | Theoretical and Experimental Investigation for the Effect Strain on the Below Threshold Output of InGaAsP Diode Lasers |
| Authors: | Cheng, Chen |
| Advisor: | Cassidy, Daniel |
| Department: | Engineering Physics |
| Keywords: | theoretical investigation;electrical investigation;strain effect;threshold output;InGaAsP diode;diode lasers |
| Publication Date: | Sep-1992 |
| Abstract: | The effect of strain (stress) on the below threshold output of InGaAsP diode lasers has been investigated theoretically and experimentally. The degree of polarization (DOP) and the polarization- resolved spectral output (PRSO) were obtained as a function of the external stress applied to the device. A correlation between the DOP and the peak of the PRSO as a function of the stress was found. This correlation suggests that below threshold, DOP can be used to measure the strain in the active region of lasers. A model based on a strain modified Shockley matrix for the band calculation and a strain modified dipole moment for the optical emission has been constructed to bridge the correlation between the DOP and PRSO. |
| URI: | http://hdl.handle.net/11375/25226 |
| Appears in Collections: | Digitized Open Access Dissertations and Theses |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Sheng_Chen_1992Sep_masters.pdf | 3.12 MB | Adobe PDF | View/Open |
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