Single Mode Tunable Short External Cavity Semiconductor Diode Lasers

Abstract

This thesis describes the use of short external cavity (SXC) semiconductor diode lasers as single longitudinal mode (SM) tunable sources. A SXC forces a multimode diode laser to lase on a single longitudinal mode. Various laser types were investigated in SXC configurations using both planar and spherical external mirrors. The side mode suppression ratio (SMSR) and the SM tuning range were measured with respect to the positioning of the external cavity element. With a planar mirror as the SXC element, SMSR of —33 dB and SM tuning ranges of 1 nm (110% of a mode spacing) were obtained with inverted rib waveguide (IRW) lasers. For external cavity lengths of ~ 60 um the total continuous SM tuning range summed over all modes was found to be 72 cm^-1 or 12 nm. The use of a spherical mirror improved the results. A SXC laser consisting of a spherical mirror and an IRW laser had SMSR values of —37 dB and SM tuning ranges of 1.10 nm. Power and voltage characteristics of SM SXC lasers were also examined. It was found possible to use the laser voltage and electronic feedback to control the external cavity length for optimum SM output. The external differential quantum efficiency (DQE) was found to be wavelength dependent and may be explained by the wavelength dependence of the scattering/absorption loss. One aspect of the characteristic trend of the DQE with respect to wavelength is that it offers the possibility of determining the lasing wavelength of the SM without the use of a monochromator.