Growth Optimization and Fabrication of 980nm InGaAs/GaAs/InGaP Lasers

Panarello, Tullio

Please use this identifier to cite or link to this item: http://hdl.handle.net/11375/24644

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DC Field	Value	Language
dc.contributor.advisor	Thompson, D. A.	-
dc.contributor.advisor	Simmons, J. G.	-
dc.contributor.author	Panarello, Tullio	-
dc.date.accessioned	2019-07-25T15:18:55Z	-
dc.date.available	2019-07-25T15:18:55Z	-
dc.date.issued	1997-11	-
dc.identifier.uri	http://hdl.handle.net/11375/24644	-
dc.description.abstract	The growth optimization and fabrication of 980nm quantum well (QW) lasers is presented. Photoluminescence (PL) spectroscopy is used to determine the optimized growth conditions for the QWs. The results are presented for optimization of both growth temperature and group V overpressure. Broad area lasers, with active regions grown at and around optimized QW growth conditions, are fabricated and characterized under pulsed conditions. These results are used to determine the optimum growth conditions for a ridge waveguide (RWG) laser structure. Once grown, RWG lasers are fabricated and characterized under continuous wave (CW) conditions. External quantum efficiencies as high as 71 % and cavity losses as low as 5.2 cm-1 are achieved.	en_US
dc.language.iso	en	en_US
dc.subject	growth optimization	en_US
dc.subject	fabrication	en_US
dc.subject	980nm	en_US
dc.subject	InGaAs	en_US
dc.subject	GaAs	en_US
dc.subject	InGaP	en_US
dc.subject	laser	en_US
dc.title	Growth Optimization and Fabrication of 980nm InGaAs/GaAs/InGaP Lasers	en_US
dc.title.alternative	InGaAs/GaAs/InGaP 980nm Lasers	en_US
dc.type	Thesis	en_US
dc.contributor.department	Engineering Physics	en_US
dc.description.degreetype	Thesis	en_US
dc.description.degree	Master of Engineering (ME)	en_US
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