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Please use this identifier to cite or link to this item: http://hdl.handle.net/11375/19876
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DC FieldValueLanguage
dc.contributor.advisorThompson, D.A.-
dc.contributor.advisorCarter, G.-
dc.contributor.authorNewcombe, Richard G.-
dc.date.accessioned2016-07-21T14:42:47Z-
dc.date.available2016-07-21T14:42:47Z-
dc.date.issued1980-08-
dc.identifier.urihttp://hdl.handle.net/11375/19876-
dc.descriptionTitle: Some Ion-Bombardment Effects on Copper-Gold Alloys, Author: Richard G. Newcombe, Location: Thodeen_US
dc.description.abstract<p>This report discusses some of the effects of medium-energy ion-bombardment on various copper-gold alloys. Thin (20nm-150nm) films of copper-gold alloys, on Si or SiO2 substrates, were bombarded with 30keV Ar+, 45keV Ar+, or 45 keV Bi+ ions, to fluences of up to 8 x 10^14 ions/mm2. One of the targets was held at ~50°K; the others were irradiated at room temperature. The effects were observed by 1.00 and 2.00 MeV He+ ion Rutherford backscattering. The results are discussed in terms of preferential sputtering, gas trapping, and surface topography.</p>en_US
dc.language.isoenen_US
dc.titleSome Ion-Bombardment Effects on Copper-Gold Alloysen_US
dc.typeThesisen_US
dc.contributor.departmentEngineering Physicsen_US
dc.description.degreetypeThesisen_US
dc.description.degreeMaster of Engineering (ME)en_US
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Title: Some Ion-Bombardment Effects on Copper-Gold Alloys, Author: Richard G. Newcombe, Location: Thode1.66 MBAdobe PDFView/Open
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