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Please use this identifier to cite or link to this item: http://hdl.handle.net/11375/18728
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DC FieldValueLanguage
dc.contributor.advisorSpringThorpe, A. J.-
dc.contributor.authorLook, Christopher-
dc.date.accessioned2016-01-12T17:58:00Z-
dc.date.available2016-01-12T17:58:00Z-
dc.date.issued1980-09-
dc.identifier.urihttp://hdl.handle.net/11375/18728-
dc.descriptionPart B of two parts. Part A found at: http://hdl.handle.net/11375/18724en_US
dc.description.abstract<p> The theory of operation and advantages of a channeled substrate planar (CSP) laser is described. The processing of such devices utilizing 5 N m wide proton bombardment defined current stripes is detailed. The optical and electrical characteristics of the resultant devices is presented. The lasers had pulsed, room temperature thresholds averaging 90mA, lased predominantly in a single longitudinal mode and were kink-free to power levels in excess of 6mW. Accelerated aging yielded an "activation energy" for the degradation process of 0.7eV which allowed for a predicted useful lifetime of 5 x 10^4 hours for these lasers. </p>en_US
dc.language.isoenen_US
dc.subjectGaA1Aen_US
dc.subjectplanar lasersen_US
dc.subjectsubstrate planaren_US
dc.subjectopticalen_US
dc.subjectelectricalen_US
dc.subject5m protonen_US
dc.titleThe Processing and Evaluation of Long Lived GaA1As Channeled Substrate Planar Lasersen_US
dc.contributor.departmentEngineering Physicsen_US
dc.description.degreetypeThesisen_US
dc.description.degreeMaster of Engineering (MEngr)en_US
Appears in Collections:Open Access Dissertations and Theses

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