Direct Energy Conversion Using the Beta-Voltaic Effect in Epitaxial Silicon P-N Junction Devices

Please use this identifier to cite or link to this item: http://hdl.handle.net/11375/18618

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DC Field	Value	Language
dc.contributor.advisor	Shewchun, J.	-
dc.contributor.author	Keeffe, Richard	-
dc.date.accessioned	2015-11-30T18:56:22Z	-
dc.date.available	2015-11-30T18:56:22Z	-
dc.date.issued	1973-09	-
dc.identifier.uri	http://hdl.handle.net/11375/18618	-
dc.description.abstract	<p> This thesis presents an investigation of the electron-voltaic effect using epitaxial P-N junctions. The effect is manifested in the direct energy conversion of beta particles emitted from a radioisotope promethium^147 source by single and multi-junction devices. The purpose of the investigation is to determine the power outputs of the devices which may be combined in series and parallel combinations in the construction of an atomic battery with a small size and long lifetime (approximately 5 -10 years). </p>	en_US
dc.language.iso	en	en_US
dc.subject	energy conversion	en_US
dc.subject	beta-voltaic effect	en_US
dc.subject	epitaxial silicon	en_US
dc.subject	P-N junction devices	en_US
dc.subject	radioisotope promethium	en_US
dc.subject	atomic battery	en_US
dc.title	Direct Energy Conversion Using the Beta-Voltaic Effect in Epitaxial Silicon P-N Junction Devices	en_US
dc.contributor.department	Materials Science	en_US
dc.description.degreetype	Thesis	en_US
dc.description.degree	Master of Science (MSc)	en_US
Appears in Collections:	Open Access Dissertations and Theses

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