Part A: Thermal and Electrical Behaviour of Thin Metal Films; Part B: Implementation Accelerator System

Abstract

Part A: The preliminary investigation of the thermal and electrical behaviour of thin metal films gives evidence, Part I, that several mechanisms are responsible for the change of resistance as the temperature increases from room temperature to 500°C. Firstly, there appears grain growth giving a characteristic decrease in resistance. Secondly, the formation of agglomerates upon the continued growth of grains; especially for the thinner Al and Cr films. This effect tends to increase the resistance and a mathematical model is proposed to explain the results qualitatively. Thirdly, the occurrence of what appeared to be an electromigration effect. This latter point provided the incentive for a study on the effects of electromigration in thin aluminum film, Part II. The results of this study are comparable to those obtained by other workers, except that the interpretation for the direction of electromigration in Al is reversed. One possible explanation for the difference in the direction of migration could be due to the interpretation of marker motion. A mathematical model is also proposed for electromigration, in which both the effects due to the applied electric field and the electrons collision with the ions have been taken into consideration. It was found that the effect due to electrons collision with the ions upon the migration of ions could be expressed in terms of an exponential function of the square of the electron to ion collision relaxation time.