A Low Temperature Study of the N-Channel MOS FET
Loading...
Date
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
No abstract included.
Description
Scope and contents: The static and dynamic electrical characteristics of silicon n-channel MOS FETs are studied down to cryogenic temperatures. Particular emphasis is directed towards the effect of interface states on the temperature dependence of both the pinch-off voltage and 1/f noise.