Please use this identifier to cite or link to this item:
http://hdl.handle.net/11375/17433| Title: | A Low Temperature Study of the N-Channel MOS FET |
| Authors: | Cizmar , Edward S. |
| Advisor: | Chisholm, S. H. |
| Department: | Electrical Engineering |
| Keywords: | silicon n-channel MOS FETs;interface states;temperature dependence;pinch-off voltage;1/f noise |
| Publication Date: | May-1969 |
| Abstract: | No abstract included. |
| Description: | Scope and contents: The static and dynamic electrical characteristics of silicon n-channel MOS FETs are studied down to cryogenic temperatures. Particular emphasis is directed towards the effect of interface states on the temperature dependence of both the pinch-off voltage and 1/f noise. |
| URI: | http://hdl.handle.net/11375/17433 |
| Appears in Collections: | Open Access Dissertations and Theses |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Cizmar_Edward_S_1969May_Masters.pdf | Thesis | 11.74 MB | Adobe PDF | View/Open |
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