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|Title:||The de Hass-van Alphen Effect in Gallium|
|Authors:||Holroyd, Wakefield Forrest|
|Advisor:||Datars, W. R.|
|Abstract:||<p>The de Haas-van Alphen effect in gallium single crystals has been studied using the low frequency field modulation technique with the magnetic field up to 56kG parallel to the three principle crystallographic planes. Frequencies due to small sixth-band hole and seventh-band electron surfaces previously observed by Goldstein and Foner over part of their expected range of magnetic field direction have been extended to show closed pieces of Fermi surface. Many new frequencies have also been observed, and most have been identified using Reed's pseudopotential model of the gallium Fermi surface. The large previously unseen eighth-band electron surface has been observed in its entirely, and a small seventh-band electron surface previously, observed in part of one plane but not identified correctly has now been unequivocally identified. Frequencies due to the small fifth-band hole surface and many frequencies attributed to the large complex comprising seventh- and eighth-band electron surfaces have been observed. Strong indication of magnetic breakdown for many of the latter are also exhibited. The large multiply-connected sixth-band hole surface is expected to have comparatively few extremal orbits according to Reed's model, but most of these were observed. In addition, several new frequencies are attributed to this surface, but were not explicitly predicted by Reed. A table of frequencies observed, and an approximate measure of their relative strengths, is also presented as a function of magnetic field orientation.</p>|
|Appears in Collections:||Open Access Dissertations and Theses|
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