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http://hdl.handle.net/11375/11114
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DC Field | Value | Language |
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dc.contributor.advisor | Knights, Andrew | en_US |
dc.contributor.advisor | Jessop, Paul | en_US |
dc.contributor.advisor | Xu, Chang-Qing | en_US |
dc.contributor.author | Huante-Ceron, Edgar | en_US |
dc.date.accessioned | 2014-06-18T16:53:36Z | - |
dc.date.available | 2014-06-18T16:53:36Z | - |
dc.date.created | 2011-09-05 | en_US |
dc.date.issued | 2011-10 | en_US |
dc.identifier.other | opendissertations/6108 | en_US |
dc.identifier.other | 7136 | en_US |
dc.identifier.other | 2219510 | en_US |
dc.identifier.uri | http://hdl.handle.net/11375/11114 | - |
dc.description.abstract | <p>Measurements of thallium and indium doped Silicon-On-Insulator rib waveguidesshow optical absorption at a wavelength of 1550nm, dependent on the charge stateof the associated deep-level. Therefore, it is possible to use this effect to modulatewaveguide transmission by means of local depletion and/or injection of free-carriersto change deep-level occupancy. A one-dimensional model based on the generationand recombination process described by the modified Shockley-Read-Hall (SRH)mechanism was developed using MATLABc programming language in order to computethe optical absorption of a 1550nm wavelength as a function of the density ofneutrally-charged thallium or indium centers. This numerical model is in reasonableagreement with the experimental data for samples co-doped with low and mediumphosphorus concentrations. The values of optical absorption cross-section calculatedfor thallium are 2.9×10−17 ± 0.25cm2 and 3.2×10−17 ± 0.12cm2 for ion implantationdoses of 7.4×10−13cm−2 and 1.2×10−14cm−2, respectively. Also described is the thedesign, fabrication and characterization of an optical modulator using a four-terminalp+pnn+ diode on an indium-doped Silicon-On-Insulator rib waveguide. Modulationby controlling the charge state of deep impurity levels in silicon was thus demonstrated.Modulation bandwidth in the 2-10MHz regime was measured and the depthof modulation is approximately 0.48dB/V in forward bias and 0.25dB/V in reversebias. This is the first report of the implementation of an optical silicon-waveguidemodulator based on a periodically interleaved pn-junction configuration. In addition,the influence of indium, as a dopant in silicon (utilizing the Impurity PhotovoltaicEffect), as a means to increase the efficiency of a thin film silicon solar cell wasinvestigated using the same samples. Under certain doping conditions and geometricalconfigurations, a cell efficiency greater than 24% was measured —a somewhatremarkable result for these silicon thin films of 2.5μm</p> | en_US |
dc.subject | Optical | en_US |
dc.subject | Waveguide | en_US |
dc.subject | Modulator | en_US |
dc.subject | Silicon | en_US |
dc.subject | Indium | en_US |
dc.subject | Thallium | en_US |
dc.subject | Electrical and Electronics | en_US |
dc.subject | Electromagnetics and photonics | en_US |
dc.subject | Power and Energy | en_US |
dc.subject | Electrical and Electronics | en_US |
dc.title | Optical Modulation by Controlling the Charge State of Deep Impurity Levels | en_US |
dc.type | thesis | en_US |
dc.contributor.department | Engineering Physics | en_US |
dc.description.degree | Doctor of Philosophy (PhD) | en_US |
Appears in Collections: | Open Access Dissertations and Theses |
Files in This Item:
File | Size | Format | |
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fulltext.pdf | 7.91 MB | Adobe PDF | View/Open |
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