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Showing results 1 to 20 of 103
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Publication Date
Title
Author(s)
Sep-2004
ABLATION AND MICROMACHINING OF INP WITH FEMTOSECOND LASER PULSES
Borowiec, Andrzej
Jun-2009
Accuracy of Boiling Water Reactor Sub channel Void Distribution Predictions
Leung, Kenneth
Sep-2009
ALL-FIBER VIBRATION SENSORS FOR STEEL INDUSTRY
Greening, Andrea Captain
Aug-1999
Analysis and monitoring of a CANDU nuclear power plant using multivariate statistical process control methods
Leger, Robert P.
Apr-2010
Analysis of Intermittent Buoyancy Induced Flow in Asymmetrically Obstructed CANDU Nuclear Reactor Fuel Channels
Spencer, J.
Oct-2013
Analytical Modelling of Isotype Heterojunctions
Gil, Manuel
2010
Annealed Proton-Exchanged LiNb03 Ridge Waveguides -- Simulation, Fabrication and Characterization
Sun, Jian
1980
Application of Ion Implantation Techniques to Anode Electrocatalyst Development for Use in Alkaline Water Electrolysis
Akano, Gbadebo Usman
2007
Application of Positron Annihilation Spectroscopy to the Study of Defects in Perovskite Type Materials
Grebennikov, Dmytro
Sep-2000
Asymmetric multiple quantum well lasers
Hamp, James Michael
1997
Atomic hydrogen-assisted epitaxy for the reduction of composition modulation in InGaAsP
LaPierre, Robert Ray
Apr-2013
Attenuation and Photodetection of Sub-Bandgap Slow Light in Silicon-on-Insulator Photonic Crystal Waveguides
Gelleta, John L.
Jun-2010
BioMEMS Glucose Sensors
Zdanovich, Andrey
1994
The Bistable Field Effect Transistor (BISFET): Theory and Realization of A Novel Optoelectronic Switiching Device
Ojha, Jawahar Jugnu
Jul-2004
BROADLY TUNABLE ULTRASHORT PULSE GENERATION WITH MODE-LOCKED SEMICONDUCTOR LASERS
BRENNAN, JOSEPH MICHAEL
Aug-1999
Characterization of indium phosphide and indium gallium arsenic phosphide grown by helium-plasma-assisted GSMBE
Pinkey, Heidi
Jun-1997
Characterization of quantum wells using degree of polarization of photoluminescence
Balasubramanian, Lakshmi
Apr-1991
Continuous microwave excitation of excimer lamps
Hassal, Bradley Scott
1998
Design, Fabrication and Characterization of n-Channel InGaAsP-InP Based Inversion Channel Technology Devices (ICT) for Optoelectronic Integrated Circuits (OEIC): Double Heterojunction Optoelectronic Switches (DOES), Heterojunction Field-Effect Transistors (HFET), Bipolar Inversion Channel Field-Effect Transistors (BICFET) and Bipolar Inversion Channel Phototransistors (BICPT).
Tan, Eugene
Apr-1995
Determination of Two-Phase Flow Parameters for Nuclear Fuel Channels using a Real-Time Neutron Radiography Method
Harvel, David Glenn